Implantation Depth Prediction
Predict nitrogen implantation depth as a function of ion energy and implantation angle.
Damage Quantification
Estimate implantation-induced damage and near-surface defect density from atomistic simulations.
Vacancy Distribution Analysis
Analyze vacancy spatial distributions and identify defect-rich regions after implantation.
NV-Center Precursor Metrics
Evaluate vacancy populations around implanted nitrogen atoms using shell-based metrics.
Fluence-Based Scaling
Convert atomistic simulation outputs into experimentally relevant defect concentrations and fluence-dependent metrics.
Physics-Guided Machine Learning
Interpolate simulation results across energy-angle space using machine-learning models trained on MD data.
600000
Atoms per MD Simulation
0 – 5 keV
Implantation Energy Range
0 – 30°
Implantation Angle Space
Thousands
Simulated Ion Impacts
Applications
Implantation Process Design
Predict implantation depth, damage, and vacancy distributions before fabrication.
Quantum Sensing
Design shallow NV centers for high-sensitivity magnetic and electric field sensing.
Single NV Engineering
Optimize implantation conditions for deterministic single-NV creation.
Quantum Computing
Support defect architectures relevant to diamond-based quantum technologies.
Invited Talks & Conference Presentations
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3MT Talk, Milwaukee, 2026
EIPBN, Denver, 2026
TMS ICME, Anaheim, 2025
TMS ICME, Anaheim, 2025
Bring Physics Into Process Design
Perfectly Defected combines atomistic simulations,
machine learning, and defect engineering to support
diamond ion implantation research and NV-center development.
